mega power dual igbt 1000 amperes/1700 volts CM1000DUC-34SA 1 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com outline drawing and circuit diagram description: powerex mega power dual (mpd) modules are designed for use in switching applications. each module consists of two igbt transistors having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heatsinking rohs compliant applications: high power dc power supply large dc motor drives utility interface inverters ordering information: example: select the complete module number you desire from the table - i.e. CM1000DUC-34SA is a 1700v (v ces ), 1000 ampere dual igbtmod power module. current rating v ces type amperes volts (x 50) cm 1000 34 dimensions inches millimeters m 0.0750.008 1.90.2 n 0.47 12.0 p 0.26 6.5 r m6 metric m6 s 0.08 2.0 t 0.99 25.1 u 0.62 15.7 v 0.71 18.0 w 0.75 19.0 x 0.43 11.0 y 0.83 21.0 z 0.41 10.5 aa 0.22 5.5 dimensions inches millimeters a 5.91 150.0 b 5.10 129.5 c 1.670.01 42.50.25 d 5.410.01 137.50.25 e 6.54 166.0 f 2.910.01 74.00.25 g 1.65 42.0 h 0.55 14.0 j 1.500.01 38.00.25 k 0.16 4.0 l 1.36 +0.04/-0.02 34.6 +1.0/-0.5 housing type (j.s.t. mfg. co. ltd) bb = vhr-2n cc = vhr-5n c2e1 e2 g2 e2 (es2) e1 (es1) c1 (cs1) c2 (cs2) g1 tr 2 di2 di1 c1 tr 1 tolerance otherwise specified (mm) division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2 a d p (8 places) l l m h h h h h h k g u h h e f f e2 c2 c2e1 c1 g2 e1 e2 g1 c1 v bb cc b c j j g g r (9 places) label u w s n x y z aa t
CM1000DUC-34SA mega power dual igbt 1000 amperes/1700 volts 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 03/13 rev. 3 absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1700 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 125c) *2,*4 i c 1000 amperes collector current (pulse, repetitive) *3 i crm 2000 amperes total power dissipation (t c = 25c) *2,*4 p tot 10,000 watts emitter current *2 i e *1 1000 amperes emitter current (pulse, repetitive) *3 i erm *1 2000 amperes isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v isol 4000 volts maximum junction temperature t j(max) 175 c maximum case temperature t c (max) 125 c operating junction temperature t j(op) -40 to +150 c storage temperature t stg -40 to +125 c *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. 51.7 0 tr1, tr2: igbt, di1, di2: fwdi each mark points to the center position of each chip. 0 38.2 51.0 98.9 111. 8 tr 2 77.8 64.7 93.2 119.3 106.2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 23.2 36.3 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 10.2 tr 2 di2 tr 1 di1 label side
CM1000DUC-34SA mega power dual igbt 1000 amperes/1700 volts 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 03/13 rev. 3 electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 10 a gate-emitter threshold voltage v ge(th) i c = 100ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 1000a, v ge = 15v, t j = 25c *5 1.9 2.4 volts (terminal = chip) i c = 1000a, v ge = 15v, t j = 125c *5 2.1 volts i c = 1000a, v ge = 15v, t j = 150c *5 2.15 volts input capacitance c ies 260 nf output capacitance c oes v ce = 10v, v ge = 0v 27 nf reverse transfer capacitance c res 5 nf gate charge q g v cc = 1000v, i c = 1000a, v ge = 15v 4700 nc turn-on delay time t d(on) 900 ns rise time t r v cc = 1000v, i c = 1000a, v ge = 15v, 350 ns turn-off delay time t d(off) r g = 2.0?, inductive load 1250 ns fall time t f 400 ns emitter-collector voltage v ec *1 i e = 1000a, v ge = 0v, t j = 25c *5 4.0 5.2 volts (terminal = chip) i e = 1000a, v ge = 0v, t j = 125c *5 2.8 volts i e = 1000a, v ge = 0v, t j = 150c *5 2.6 volts reverse recovery time t rr *1 v cc = 1000v, i e = 900a, v ge = 15v 400 ns reverse recovery charge q rr *1 r g = 2.0?, inductive load 270 c turn-on switching energy per pulse e on v cc = 1000v, i c = i e = 1000a, 239 mj turn-off switching energy per pulse e off v ge = 15v, r g = 2.0?, t j = 150c, 269 mj reverse recovery energy per pulse e rr *1 inductive load 130 mj internal lead resistance r cc' + ee' main terminals-chip, 0.286 m? per switch,t c = 25c *4 internal gate resistance r g per switch 0.56 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *5 pulse width and repetition rate should be such as to cause negligible temperature rise. 51.7 0 tr1, tr2: igbt, di1, di2: fwdi each mark points to the center position of each chip. 0 38.2 51.0 98.9 111. 8 tr 2 77.8 64.7 93.2 119.3 106.2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 23.2 36.3 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 10.2 tr 2 di2 tr 1 di1 label side
CM1000DUC-34SA mega power dual igbt 1000 amperes/1700 volts 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 03/13 rev. 3 electrical characteristics, t j = 25c unless otherwise specifed (continued) thermal resistance characteristics thermal resistance, junction to case *4 r th(j-c) q per igbt 15 k/kw thermal resistance, junction to case *4 r th(j-c) d per diode 24 k/kw contact thermal resistance, r th(c-f) thermal grease applied 6 k/kw case to heatsink (per 1 module) *6 mechanical characteristics mounting torque m t main terminals, m6 screw 22 27 31 in-lb m s mounting to heatsink, m6 screw 22 27 31 in-lb creepage distance d s terminal to terminal 24 mm terminal to baseplate 33 mm clearance d a terminal to terminal 14 mm terminal to baseplate 33 mm weight m 1450 grams flatness of baseplate e c on centerline x, y *7 - 50 + 100 m recommended operating conditons, t a = 25c (dc) supply voltage v cc applied across c1-e2 1000 1200 volts gate-emitter drive voltage v ge(on) applied across g1-es1/g2-es2 13.5 15.0 16.5 volts external gate resistance r g per switch 2.0 6.0 ? *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *6 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *7 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. x bottom ? concave + convex ? concave + convex bottom bottom label side y1 39 mm 39 mm y2 51.7 0 tr1, tr2: igbt, di1, di2: fwdi each mark points to the center position of each chip. 0 38.2 51.0 98.9 111. 8 tr 2 77.8 64.7 93.2 119.3 106.2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 23.2 36.3 tr 2 di2 tr 1 di1 tr 2 di2 tr 1 di1 10.2 tr 2 di2 tr 1 di1 label side
CM1000DUC-34SA mega power dual igbt 1000 amperes/1700 volts 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 03/13 rev. 3 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 -1 10 0 10 1 0 2 1 5 3 4 6 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (chip - typical) 10 2 10 3 10 4 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (chip - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c v ge = 0v t j = 25c c ies c oes c res i c = 2000a i c = 1000a i c = 600a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (chip - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13.5 15 9 t j = 25 c 2000 500 1000 1500 collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (chip - typical) 4.5 4.0 2.5 3.0 3.5 0 2.0 1.5 0.5 1.0 0 2000 1500 500 1000 v ge = 15v t j = 25c t j = 125c t j = 150c 10 -1 collector current, i c , (amperes) 10 4 10 1 10 2 10 3 10 0 10 1 10 2 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 1000v v ge = 15v r g = 2.0 t j = 125c inductive load t f 10 3 collector current, i c , (amperes) 10 4 10 1 10 2 10 3 10 0 10 1 10 2 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 1000v v ge = 15v r g = 2.0 t j = 150c inductive load t f 10 3 external gate resistance, r g , ( ) 10 4 10 0 10 -1 10 1 switching time, (ns) switching time vs. gate resistance (typical) t d(on) t r v cc = 1000v v ge = 15v i c = 1000a t j = 125c inductive load t f 10 1 external gate resistance, r g , ( ) 10 4 10 3 10 3 10 0 10 2 10 2 switching time, (ns) switching time vs. gate resistance (typical) 10 1 v ge = 15v t j = 25c t j = 125c t j = 150c t d(on) t r v cc = 1000v v ge = 15v i c = 1000a t j = 150c inductive load t f t d(off) t d(off)
CM1000DUC-34SA mega power dual igbt 1000 amperes/1700 volts 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 03/13 rev. 3 time, (s) transient thermal impedance characteristics (maximum) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 15 k/kw (igbt) r th(j-c) = 24 k/kw (fwdi) normalized transient thermal impedance, z th(j-c') gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 15 10 5 0 6000 2000 8000 4000 i c = 1000a v cc = 1000v t j = 25c emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 1 10 3 v cc = 1000v v ge = 15v r g = 2.0 t j = 125c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 1 10 2 10 2 10 3 v cc = 1000v v ge = 15v r g = 2.0 t j = 150c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) gate resistance, r g , (?) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 3 10 2 10 -1 10 0 10 1 10 1 half-bridge switching characteristics (typical) v cc = 1000v v ge = 15v r g = 2.0 t j = 125c v cc = 1000v v ge = 15v i c /i e = 1000a t j = 125c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 3 10 2 10 1 half-bridge switching characteristics (typical) e on e off e rr gate resistance, r g , (?) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 3 10 2 10 -1 10 0 10 1 10 1 v cc = 1000v v ge = 15v i c /i e = 1000a t j = 150c e on e off e rr e on e off e rr 10 1 10 2 10 3 v cc = 1000v v ge = 15v r g = 2.0 t j = 150c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 3 10 2 10 1 half-bridge switching characteristics (typical) e on e off e rr 10 1 10 2 10 3
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